N-Channel Power MOSFET, 500V Drain-Source Voltage, 6A Continuous Drain Current, and 1.3Ω Max On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a DPAK surface-mount package, 119W power dissipation, and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 8.5ns and fall time of 20ns. RoHS compliant and lead-free.
PackageDPAK
MountingSurface Mount
Power119W
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Technical Specifications
International Rectifier IRFR825TRPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 1.3R |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 119W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 8.5ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR825TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR825TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.