
P-Channel Power MOSFET, TO-252-3 package, featuring 55V drain-source voltage and 11A continuous drain current. Offers a low 175mΩ maximum drain-source on-resistance. Designed for surface mounting with a maximum power dissipation of 38W and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 37ns.
International Rectifier IRFR9024NTRPBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 11A |
| Current Rating | -11A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 175mR |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Rds On Max | 175mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | -55V |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFR9024NTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
