IRFR9120NPBF

P-Channel MOSFET, 100V, 6.6A, 480mR, DPAK

P-channel power MOSFET with 100V drain-source voltage and 6.6A continuous drain current. Features a low 480mΩ maximum drain-source on-resistance and 40W power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a DPAK surface-mount package, offering fast switching speeds with turn-on delay of 14ns and fall time of 31ns. Operating temperature range is -55°C to 150°C, and it is RoHS compliant.

PackageDPAK

Current Rating-6.6A

MountingSurface Mount

Power40W

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Technical Specifications

International Rectifier IRFR9120NPBF technical specifications.

General

Package/Case	DPAK
Continuous Drain Current (ID)	6.6A
Current Rating	-6.6A
Drain to Source Voltage (Vdss)	100V
Drain-source On Resistance-Max	480mR
Dual Supply Voltage	100V
Fall Time	31ns
Gate to Source Voltage (Vgs)	20V
Height	2.39mm
Input Capacitance	350pF
Lead Free	Lead Free
Length	6.73mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	40W
Mount	Surface Mount
Nominal Vgs	-4V
Number of Elements	1
Power Dissipation	40W
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	SMD/SMT
Turn-Off Delay Time	28ns
Turn-On Delay Time	14ns
DC Rated Voltage	-100V
Width	6.22mm