N-Channel Power MOSFET, 200V Drain-Source Voltage, 9.4A Continuous Drain Current, and 380mΩ Max On-Resistance. Features a 30V Gate-Source Voltage, 86W Max Power Dissipation, and operates from -55°C to 175°C. This silicon Metal-oxide Semiconductor FET is housed in a DPAK surface-mount package, ideal for tape and reel packaging. Includes fast switching characteristics with turn-on delay of 7.5ns and fall time of 9.3ns.
PackageDPAK
Current Rating9.4A
MountingSurface Mount
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Technical Specifications
International Rectifier IRFR9N20DTRLPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 9.4A |
| Current Rating | 9.4A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 380mR |
| Fall Time | 9.3ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 560pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 86W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 7.5ns |
| DC Rated Voltage | 200V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR9N20DTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFR9N20DTRLPBF to view detailed technical specifications.
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