N-Channel Power MOSFET, 200V Drain-Source Voltage, 31A Continuous Drain Current, and 82mΩ Maximum Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a D2PAK surface-mount package, 10.67mm length, 9.65mm width, and 4.83mm height. Operating temperature range is -55°C to 175°C with a 3.1W maximum power dissipation. Includes 16ns turn-on delay and 26ns turn-off delay.
PackageD2PAK
Current Rating31A
MountingSurface Mount
Power3.1W
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Technical Specifications
International Rectifier IRFS31N20DPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 31A |
| Current Rating | 31A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 82mR |
| Dual Supply Voltage | 200V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 2.37nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | 5.5V |
| Number of Elements | 1 |
| Power Dissipation | 3.1W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 200V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFS31N20DPBF Datasheet
Download the complete datasheet for International Rectifier IRFS31N20DPBF to view detailed technical specifications.
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