N-Channel Power MOSFET, 160A continuous drain current, 60V drain-source breakdown voltage, and 4.2mΩ maximum drain-source on-resistance. This silicon, metal-oxide semiconductor FET features a D2PAK surface-mount package with a maximum power dissipation of 230W and operates from -55°C to 175°C. Key specifications include 4.52nF input capacitance, 4V threshold voltage, and fast switching times with 15ns turn-on and 40ns turn-off delays. The component is lead-free and RoHS compliant.
International Rectifier IRFS3306PBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 160A |
| Current Rating | 160A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 4.2MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 4.52nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 230W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 60V |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFS3306PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
