N-channel power MOSFET for surface mount applications. Features 80A continuous drain current, 75V drain-source voltage, and 0.009 ohm on-resistance. Operates with a maximum gate-source voltage of 20V and a maximum power dissipation of 140W. This silicon, metal-oxide semiconductor FET is housed in a D2PAK package, offering a wide operating temperature range from -55°C to 175°C. Turn-on delay is 16ns and turn-off delay is 43ns. RoHS compliant and lead-free.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
International Rectifier IRFS3607TRLPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 80A |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 3.07nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 16ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFS3607TRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFS3607TRLPBF to view detailed technical specifications.
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