N-Channel Power MOSFET, 100V drain-source voltage, featuring a low 4.7mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET offers a continuous drain current capability of 180A and a maximum power dissipation of 375W. Encased in a TO-263 (D2PAK) package, it operates across a wide temperature range from -55°C to 175°C. The component is lead-free and RoHS compliant.
PackageTO-263
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Technical Specifications
International Rectifier IRFS4010TRLPBF technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
180A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
4.7MR
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
375W
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFS4010TRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFS4010TRLPBF to view detailed technical specifications.
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