N-Channel Power MOSFET, 100V drain-source voltage, featuring a low 4.7mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET offers a continuous drain current capability of 180A and a maximum power dissipation of 375W. Encased in a TO-263 (D2PAK) package, it operates across a wide temperature range from -55°C to 175°C. The component is lead-free and RoHS compliant.
PackageTO-263
Quick Jump:
Technical Specifications
International Rectifier IRFS4010TRLPBF technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 4.7MR |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFS4010TRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFS4010TRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.