N-Channel Power MOSFET, 150V Vds, 105A continuous drain current, and 11.8mΩ max Rds(on). This silicon Metal-oxide Semiconductor FET features a D2PAK package for surface mounting, a max power dissipation of 380W, and operates from -55°C to 175°C. Key switching parameters include an 18ns turn-on delay and a 23ns fall time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power380W
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Technical Specifications
International Rectifier IRFS4115-7PPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 105A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 11.8MR |
| Dual Supply Voltage | 150V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.55mm |
| Input Capacitance | 5.32nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 380W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 18ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFS4115-7PPBF Datasheet
Download the complete datasheet for International Rectifier IRFS4115-7PPBF to view detailed technical specifications.
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