N-Channel Power MOSFET, 150V Vds, 105A continuous drain current, and 11.8mΩ max Rds(on). This silicon Metal-oxide Semiconductor FET features a D2PAK package for surface mounting, a max power dissipation of 380W, and operates from -55°C to 175°C. Key switching parameters include an 18ns turn-on delay and a 23ns fall time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power380W
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Technical Specifications
International Rectifier IRFS4115-7PPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
105A
Drain to Source Breakdown Voltage
150V
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
11.8MR
Dual Supply Voltage
150V
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
Height
4.55mm
Input Capacitance
5.32nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
380W
Mount
Surface Mount
Nominal Vgs
5V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
380W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Termination
SMD/SMT
Turn-Off Delay Time
37ns
Turn-On Delay Time
18ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFS4115-7PPBF Datasheet
Download the complete datasheet for International Rectifier IRFS4115-7PPBF to view detailed technical specifications.
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