N-Channel Power MOSFET, 150V Vds, 195A continuous drain current, and 12.1mΩ max drain-source on-resistance. Features a D2PAK surface-mount package, 375W power dissipation, and operates from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 18ns and fall time of 39ns. RoHS compliant and lead-free.
International Rectifier IRFS4115PBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 195A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 12.1MR |
| Dual Supply Voltage | 150V |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 5.27nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 375W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 18ns |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFS4115PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
