N-Channel Power MOSFET featuring 200V Drain-to-Source Voltage (Vdss) and a maximum Drain-source On-Resistance of 22mΩ. This silicon, metal-oxide semiconductor field-effect transistor offers a continuous drain current of 72A. Encased in a TO-263AB (D2PAK-3) package, it is RoHS compliant and designed for lead-free applications.
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Technical Specifications
International Rectifier IRFS4127TRLPBF technical specifications.
General
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 22MR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFS4127TRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFS4127TRLPBF to view detailed technical specifications.
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