N-Channel Power MOSFET, D2PAK package, featuring 200V drain-source voltage and 62A continuous drain current. Offers a low 26mΩ maximum drain-source on-resistance. Operates with a 30V gate-source voltage and boasts a maximum power dissipation of 330W. This silicon, metal-oxide semiconductor FET is surface mountable, lead-free, and RoHS compliant, with operating temperatures ranging from -40°C to 175°C.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
International Rectifier IRFS4227TRLPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 62A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 26MR |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 4.6nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 330W |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 33ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFS4227TRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFS4227TRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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