N-channel power MOSFET featuring 250V drain-source voltage and 45A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 48mΩ drain-source on-resistance and a maximum power dissipation of 330W. Designed for surface mounting in a D2PAK package, it operates from -40°C to 175°C and includes fast switching times with 18ns turn-on and 30ns turn-off delays.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
International Rectifier IRFS4229TRLPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 48MR |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.576mm |
| Input Capacitance | 4.56nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 330W |
| Mount | Surface Mount |
| RoHS Compliant | No |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 18ns |
| Width | 9.65mm |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFS4229TRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFS4229TRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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