N-channel power MOSFET featuring 100V drain-source voltage and 85A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 15mΩ drain-source on-resistance. Designed for high power applications with a maximum power dissipation of 350W and an operating temperature range of -55°C to 175°C. Packaged in a TO-263 (D2PAK) plastic housing, this component is lead-free and RoHS compliant.
PackageTO-263
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Technical Specifications
International Rectifier IRFS4321TRLPBF technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 85A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 15MR |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Nominal Vgs | 5V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFS4321TRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFS4321TRLPBF to view detailed technical specifications.
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