
N-Channel Power MOSFET, D2PAK package, featuring 200V drain-source breakdown voltage and 24A continuous drain current. Offers a low 77.5mΩ maximum drain-source on-resistance. Designed for surface mounting with a maximum power dissipation of 144W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 8.6ns and fall time of 9.9ns.
International Rectifier IRFS5620PBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 77.5MR |
| Fall Time | 9.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.71nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 144W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 144W |
| Radiation Hardening | No |
| Rds On Max | 77.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17.1ns |
| Turn-On Delay Time | 8.6ns |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFS5620PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
