International Rectifier
IRFS59N10DPBF
Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
PackageTO-263
Current Rating59A
MountingSurface Mount
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Technical Specifications
International Rectifier IRFS59N10DPBF technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 59A |
| Current Rating | 59A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 25mR |
| Dual Supply Voltage | 100V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 2.45nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Nominal Vgs | 5.5V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 100V |
| Width | 10.54mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFS59N10DPBF Datasheet
Download the complete datasheet for International Rectifier IRFS59N10DPBF to view detailed technical specifications.
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