The IRFSL17N20D is a 200V 16A HEXFET power transistor packaged in a TO-262-3 through hole package. It has a maximum power dissipation of 3.8W and an on-resistance of 170mR. The device is not RoHS compliant and contains lead. It is rated for operation over a temperature range of -55°C to 150°C.
PackageTO-262-3
Current Rating16A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFSL17N20D technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 1.1nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 3.8W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 170mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFSL17N20D Datasheet
Download the complete datasheet for International Rectifier IRFSL17N20D to view detailed technical specifications.
No datasheet is available for this part.