The IRFSL31N20D is a HEXFET MOSFET with a drain to source breakdown voltage of 200V and a continuous drain current of 31A. It is packaged in a TO-262-3 and is rated for a maximum power dissipation of 3.1W. The device is not RoHS compliant and contains lead. It is suitable for use in a variety of applications, including power supplies and motor control circuits.
PackageTO-262-3
Current Rating31A
MountingThrough Hole
Power200W
Quick Jump:
Technical Specifications
International Rectifier IRFSL31N20D technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 31A |
| Current Rating | 31A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 2.37nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 3.1W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| Rds On Max | 82mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFSL31N20D Datasheet
Download the complete datasheet for International Rectifier IRFSL31N20D to view detailed technical specifications.
No datasheet is available for this part.