N-Channel Power MOSFET, 60V Drain-Source Voltage, 210A Continuous Drain Current, and 3mΩ Drain-Source On-Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-262 package, 300W maximum power dissipation, and a maximum operating temperature of 175°C. It offers fast switching speeds with turn-on delay of 19ns and fall time of 83ns. Designed for through-hole mounting, this component is RoHS compliant and lead-free.
PackageTO-262
Current Rating210A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFSL3206PBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
210A
Current Rating
210A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
3mR
Drain to Source Voltage (Vdss)
60V
Fall Time
83ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
6.54nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
3mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
55ns
Turn-On Delay Time
19ns
DC Rated Voltage
60V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFSL3206PBF Datasheet
Download the complete datasheet for International Rectifier IRFSL3206PBF to view detailed technical specifications.
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