N-Channel Power MOSFET, 60V Drain-Source Voltage, 210A Continuous Drain Current, and 3mΩ Drain-Source On-Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-262 package, 300W maximum power dissipation, and a maximum operating temperature of 175°C. It offers fast switching speeds with turn-on delay of 19ns and fall time of 83ns. Designed for through-hole mounting, this component is RoHS compliant and lead-free.
PackageTO-262
Current Rating210A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFSL3206PBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 210A |
| Current Rating | 210A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 83ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 6.54nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 19ns |
| DC Rated Voltage | 60V |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFSL3206PBF Datasheet
Download the complete datasheet for International Rectifier IRFSL3206PBF to view detailed technical specifications.
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