N-Channel Power MOSFET, 100V Drain-to-Source Voltage, 88A Continuous Drain Current, and 10mΩ Rds(on). This silicon, metal-oxide semiconductor FET features a TO-262 package with through-hole mounting. It offers a maximum power dissipation of 200W and operates within a temperature range of -55°C to 175°C. Key switching parameters include a 24ns turn-on delay and 50ns fall time.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power250W
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Technical Specifications
International Rectifier IRFSL4410PBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
88A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
5.15nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
250W
Radiation Hardening
No
Rds On Max
10mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
55ns
Turn-On Delay Time
24ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFSL4410PBF Datasheet
Download the complete datasheet for International Rectifier IRFSL4410PBF to view detailed technical specifications.
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