N-Channel Power MOSFET, 100V Drain-to-Source Voltage, 88A Continuous Drain Current, and 10mΩ Rds(on). This silicon, metal-oxide semiconductor FET features a TO-262 package with through-hole mounting. It offers a maximum power dissipation of 200W and operates within a temperature range of -55°C to 175°C. Key switching parameters include a 24ns turn-on delay and 50ns fall time.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power250W
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Technical Specifications
International Rectifier IRFSL4410PBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 88A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 5.15nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 24ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFSL4410PBF Datasheet
Download the complete datasheet for International Rectifier IRFSL4410PBF to view detailed technical specifications.
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