N-Channel Power MOSFET, TO-262 package, featuring 200V drain-source breakdown voltage and 24A continuous drain current. Offers a low 77.5mΩ drain-source on-resistance at a nominal 5V gate-source voltage. Designed for through-hole mounting with a maximum power dissipation of 144W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 13.4ns and fall time of 14.8ns.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power144W
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Technical Specifications
International Rectifier IRFSL4620PBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 77.5mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 63.7MR |
| Dual Supply Voltage | 200V |
| Fall Time | 14.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 1.71nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 144W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 144W |
| Radiation Hardening | No |
| Rds On Max | 77.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | Through Hole |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 25.4ns |
| Turn-On Delay Time | 13.4ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFSL4620PBF Datasheet
Download the complete datasheet for International Rectifier IRFSL4620PBF to view detailed technical specifications.
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