N-Channel Power MOSFET, TO-262 package, featuring 200V drain-source breakdown voltage and 24A continuous drain current. Offers a low 77.5mΩ drain-source on-resistance at a nominal 5V gate-source voltage. Designed for through-hole mounting with a maximum power dissipation of 144W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 13.4ns and fall time of 14.8ns.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power144W
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Technical Specifications
International Rectifier IRFSL4620PBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
24A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
77.5mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
63.7MR
Dual Supply Voltage
200V
Fall Time
14.8ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
1.71nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
144W
Mount
Through Hole
Nominal Vgs
5V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
144W
Radiation Hardening
No
Rds On Max
77.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
Through Hole
Threshold Voltage
5V
Turn-Off Delay Time
25.4ns
Turn-On Delay Time
13.4ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFSL4620PBF Datasheet
Download the complete datasheet for International Rectifier IRFSL4620PBF to view detailed technical specifications.
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