The IRFSL59N10D is a N-Channel MOSFET with a continuous drain current rating of 59A and a drain to source breakdown voltage of 100V. It is packaged in a TO-262-3 package and is designed for through hole mounting. The device has a maximum power dissipation of 3.8W and a maximum Rds on resistance of 25mR. The IRFSL59N10D is not RoHS compliant and is available in a package quantity of 50 units per rail/tube packaging.
PackageTO-262-3
Current Rating59A
MountingThrough Hole
Power200W
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Technical Specifications
International Rectifier IRFSL59N10D technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 59A |
| Current Rating | 59A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 2.45nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 3.8W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| Rds On Max | 25mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFSL59N10D Datasheet
Download the complete datasheet for International Rectifier IRFSL59N10D to view detailed technical specifications.
No datasheet is available for this part.