N-Channel Power MOSFET, 60V Vds, 79A Continuous Drain Current (ID), and 8.4mΩ Max Rds On. Features a 4V Threshold Voltage, 2.29nF Input Capacitance, and 110W Max Power Dissipation. Operates from -55°C to 175°C with a 6.22mm height, 6.73mm length, and 2.39mm width. Through-hole mounting in a TO-251-3 package.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
International Rectifier IRFU1018EPBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
79A
Drain to Source Breakdown Voltage
60V
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
8.4MR
Fall Time
46ns
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
2.29nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
8.4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
4V
Turn-Off Delay Time
55ns
Turn-On Delay Time
13ns
Width
2.39mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFU1018EPBF Datasheet
Download the complete datasheet for International Rectifier IRFU1018EPBF to view detailed technical specifications.
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