
N-Channel Power MOSFET, 60V Vds, 79A Continuous Drain Current (ID), and 8.4mΩ Max Rds On. Features a 4V Threshold Voltage, 2.29nF Input Capacitance, and 110W Max Power Dissipation. Operates from -55°C to 175°C with a 6.22mm height, 6.73mm length, and 2.39mm width. Through-hole mounting in a TO-251-3 package.
International Rectifier IRFU1018EPBF technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 79A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 8.4MR |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 2.29nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 8.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 13ns |
| Width | 2.39mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFU1018EPBF to view detailed technical specifications.
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