N-Channel Power MOSFET featuring 200V drain-source voltage and 13A continuous drain current. This silicon, metal-oxide semiconductor FET offers a maximum on-state resistance of 235mΩ at a nominal gate-source voltage of 5.5V. Designed for through-hole mounting in a TO-251AA package, it boasts a maximum power dissipation of 110W and operates across a wide temperature range from -55°C to 175°C. The component is RoHS compliant and lead-free.
PackageTO-251-3
Current Rating13A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFU13N20DPBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 235MR |
| Dual Supply Voltage | 200V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 830pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Nominal Vgs | 5.5V |
| On-State Resistance | 235R |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Rds On Max | 235mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 200V |
| Width | 9.78mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFU13N20DPBF Datasheet
Download the complete datasheet for International Rectifier IRFU13N20DPBF to view detailed technical specifications.
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