N-Channel Power MOSFET featuring a 200V drain-source breakdown voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 165mΩ Rds On and is housed in a TO-251AA IPAK-3 package for through-hole mounting. Key electrical characteristics include 910pF input capacitance, 8.9ns fall time, and 9.7ns turn-on delay. Designed for operation between -55°C and 175°C, this lead-free, RoHS compliant component boasts a 140W power dissipation.
PackageTO-251-3
Current Rating17A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFU15N20DPBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 8.9ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 910pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 165mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 9.7ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFU15N20DPBF Datasheet
Download the complete datasheet for International Rectifier IRFU15N20DPBF to view detailed technical specifications.
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