
N-CHANNEL Power MOSFET featuring 75V Drain to Source Breakdown Voltage and 45A Continuous Drain Current. Offers low 22mΩ Rds On resistance and 110W Max Power Dissipation. Designed for through-hole mounting in a TO-251-3 package, this component boasts a 2V Threshold Voltage and operates within a -55°C to 175°C temperature range. Key switching characteristics include 14ns Turn-On Delay Time and 28ns Fall Time.
International Rectifier IRFU2607ZPBF technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Voltage (Vdss) | 75V |
| Dual Supply Voltage | 75V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.1mm |
| Input Capacitance | 1.44nF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Rds On Max | 22mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 30ns |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | Through Hole |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 14ns |
| Width | 2.3mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFU2607ZPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
