N-CHANNEL MOSFET featuring 30V drain-source breakdown voltage and 33A continuous drain current. This through-hole component offers a low 31mΩ drain-source resistance and 57W power dissipation. Key electrical characteristics include 750pF input capacitance, 29nC gate charge, and fast switching times with turn-on delay of 11ns and fall time of 28ns. Packaged in TO-251-3, it operates from -55°C to 150°C and is RoHS compliant.
PackageTO-251-3
Current Rating33A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFU3303PBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 33A |
| Current Rating | 33A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 57W |
| Radiation Hardening | No |
| Rds On Max | 31mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 30V |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFU3303PBF Datasheet
Download the complete datasheet for International Rectifier IRFU3303PBF to view detailed technical specifications.
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