International Rectifier
IRFU3505PBF
Power Field-Effect Transistor, 30A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
PackageTO-251AA
MountingThrough Hole
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Technical Specifications
International Rectifier IRFU3505PBF technical specifications.
General
| Package/Case | TO-251AA |
| Continuous Drain Current (ID) | 71A |
| Drain to Source Voltage (Vdss) | 55V |
| Dual Supply Voltage | 55V |
| Fall Time | 54ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.03nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| On-State Resistance | 13R |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFU3505PBF Datasheet
Download the complete datasheet for International Rectifier IRFU3505PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.