N-Channel Power MOSFET, TO-251-3 package, featuring a 20V drain-to-source breakdown voltage and 60A continuous drain current. Offers a low 8.4mΩ drain-to-source on-resistance at a nominal 2.1V gate-to-source voltage. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 48W. Includes fast switching characteristics with turn-on delay of 41ns and fall time of 12ns. RoHS compliant and lead-free.
PackageTO-251-3
Current Rating60A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFU3704ZPBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
60A
Current Rating
60A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
11.4mR
Drain to Source Voltage (Vdss)
20V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
6.1mm
Input Capacitance
1.19nF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
48W
Mount
Through Hole
Nominal Vgs
2.1V
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
48W
Radiation Hardening
No
Rds On Max
8.4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
4.9ns
Turn-On Delay Time
41ns
DC Rated Voltage
20V
Width
2.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFU3704ZPBF Datasheet
Download the complete datasheet for International Rectifier IRFU3704ZPBF to view detailed technical specifications.
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