N-Channel Power MOSFET, TO-251-3 package, featuring a 20V drain-to-source breakdown voltage and 60A continuous drain current. Offers a low 8.4mΩ drain-to-source on-resistance at a nominal 2.1V gate-to-source voltage. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 48W. Includes fast switching characteristics with turn-on delay of 41ns and fall time of 12ns. RoHS compliant and lead-free.
PackageTO-251-3
Current Rating60A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFU3704ZPBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 60A |
| Current Rating | 60A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 11.4mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.1mm |
| Input Capacitance | 1.19nF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Nominal Vgs | 2.1V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Radiation Hardening | No |
| Rds On Max | 8.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 4.9ns |
| Turn-On Delay Time | 41ns |
| DC Rated Voltage | 20V |
| Width | 2.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFU3704ZPBF Datasheet
Download the complete datasheet for International Rectifier IRFU3704ZPBF to view detailed technical specifications.
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