International Rectifier
IRFU3711PBF
Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power120W
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Technical Specifications
International Rectifier IRFU3711PBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.98nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Radiation Hardening | No |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFU3711PBF Datasheet
Download the complete datasheet for International Rectifier IRFU3711PBF to view detailed technical specifications.
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