P-channel power MOSFET featuring 150V drain-source voltage and 13A continuous drain current. Offers a low 295mΩ maximum drain-source on-resistance at a nominal gate-source voltage of -4V. Designed for through-hole mounting in a TO-251-3 IPAK package, this silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 110W. Includes lead-free and RoHS compliance.
PackageTO-251-3
Current Rating-13A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFU6215PBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 13A |
| Current Rating | -13A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 580MR |
| Dual Supply Voltage | -150V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 7.49mm |
| Input Capacitance | 860pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| On-State Resistance | 580mR |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Rds On Max | 295mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -150V |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFU6215PBF Datasheet
Download the complete datasheet for International Rectifier IRFU6215PBF to view detailed technical specifications.
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