International Rectifier
IRFU9N20D
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3
PackageTO-251-3
MountingThrough Hole
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Technical Specifications
International Rectifier IRFU9N20D technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 9.4A |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 560pF |
| Max Power Dissipation | 86W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Rds On Max | 380mR |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFU9N20D Datasheet
Download the complete datasheet for International Rectifier IRFU9N20D to view detailed technical specifications.
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