International Rectifier
IRFY130CM
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN
MountingThrough Hole
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Technical Specifications
International Rectifier IRFY130CM technical specifications.
General
| Continuous Drain Current (ID) | 14.4A |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRFY130CM Datasheet
Download the complete datasheet for International Rectifier IRFY130CM to view detailed technical specifications.
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