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INTERNATIONAL RECTIFIER

IRFZ24NS

Datasheet
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
International Rectifier

IRFZ24NS

Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

  1. Semiconductors
  2. Discrete Semiconductors
  1. Semiconductors
  2. Discrete Semiconductors
  3. Transistors
  4. MOSFETs

PackageD2PAK
Current Rating17A
MountingSurface Mount
Power3.8W
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Technical Specifications

International Rectifier IRFZ24NS technical specifications.

General

Package/Case
D2PAK
Continuous Drain Current (ID)
17A
Current Rating
17A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
70mR
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Elements
1
Packaging
Bulk
Power Dissipation
3.8W
RoHS Compliant
No
DC Rated Voltage
55V

Compliance

RoHS
Not Compliant

Datasheet

International Rectifier IRFZ24NS Datasheet

Download the complete datasheet for International Rectifier IRFZ24NS to view detailed technical specifications.

This datasheet cannot be embedded due to technical restrictions.

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