N-Channel Power MOSFET, D2PAK package, featuring 55V drain-source breakdown voltage and 17A continuous drain current. Offers a low 70mΩ maximum drain-source on-resistance. Operates with a gate-source voltage up to 20V and boasts fast switching times with a 4.9ns turn-on delay and 19ns turn-off delay. This surface-mount component is lead-free and RoHS compliant, with a maximum power dissipation of 45W.
International Rectifier IRFZ24NSTRLPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 70mR |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 370pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 4.9ns |
| Width | 13.08mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFZ24NSTRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.