N-Channel Power MOSFET, TO-262 package, featuring 55V drain-source breakdown voltage and 29A continuous drain current. Offers a low 40mΩ drain-source on-resistance. Designed with a 7ns turn-on delay and 31ns turn-off delay, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C. Through-hole mounting and RoHS compliant.
PackageTO-262
Current Rating29A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFZ34NLPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 29A |
| Current Rating | 29A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 40mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 68W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ34NLPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ34NLPBF to view detailed technical specifications.
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