
N-Channel Power MOSFET, TO-262 package, featuring 55V drain-source breakdown voltage and 29A continuous drain current. Offers a low 40mΩ drain-source on-resistance. Designed with a 7ns turn-on delay and 31ns turn-off delay, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C. Through-hole mounting and RoHS compliant.
International Rectifier IRFZ34NLPBF technical specifications.
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