N-Channel Power MOSFET, TO-262 package, featuring 55V drain-source breakdown voltage and 29A continuous drain current. Offers a low 40mΩ drain-source on-resistance. Designed with a 7ns turn-on delay and 31ns turn-off delay, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C. Through-hole mounting and RoHS compliant.
PackageTO-262
Current Rating29A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFZ34NLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
29A
Current Rating
29A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
40mR
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
700pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
68W
Radiation Hardening
No
Rds On Max
40mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
31ns
Turn-On Delay Time
7ns
DC Rated Voltage
55V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFZ34NLPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ34NLPBF to view detailed technical specifications.
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