IRFZ34NSTRL

Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

PackageTO-263

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International Rectifier IRFZ34NSTRL technical specifications.

Package/Case

TO-263

Continuous Drain Current (ID)

29A

Drain to Source Voltage (Vdss)

55V

Max Operating Temperature

175°C

Max Power Dissipation

3.8W

Nominal Vgs

Reach SVHC Compliant

Unknown

RoHS Compliant

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.