International Rectifier
IRFZ34NSTRLPBF
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
PackageTO-263
MountingSurface Mount
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Technical Specifications
International Rectifier IRFZ34NSTRLPBF technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
29A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
40mR
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Threshold Voltage
4V
Turn-Off Delay Time
31ns
Turn-On Delay Time
7ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFZ34NSTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ34NSTRLPBF to view detailed technical specifications.
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