International Rectifier
IRFZ34NSTRR
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
PackageD2PAK
Current Rating29A
MountingSurface Mount
Power3.8W
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Technical Specifications
International Rectifier IRFZ34NSTRR technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
29A
Current Rating
29A
Drain to Source Voltage (Vdss)
55V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
700pF
Lead Free
Contains Lead
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Number of Elements
1
Package Quantity
800
Packaging
Tape and Reel
Power Dissipation
3.8W
Rds On Max
40mR
RoHS Compliant
No
DC Rated Voltage
55V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRFZ34NSTRR Datasheet
Download the complete datasheet for International Rectifier IRFZ34NSTRR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.