International Rectifier
IRFZ34NSTRRPBF
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power68W
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Technical Specifications
International Rectifier IRFZ34NSTRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 700pF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 68W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 7ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ34NSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ34NSTRRPBF to view detailed technical specifications.
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