International Rectifier
IRFZ34VPBF
Power Field-Effect Transistor, 30A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
International Rectifier IRFZ34VPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ34VPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ34VPBF to view detailed technical specifications.
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