International Rectifier
IRFZ44ELPBF
Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262
MountingThrough Hole
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Technical Specifications
International Rectifier IRFZ44ELPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 48A |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 10.54mm |
| Input Capacitance | 1.36nF |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 12ns |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ44ELPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ44ELPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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