
N-Channel Power MOSFET, D2PAK package, featuring 60V drain-source breakdown voltage and 48A continuous drain current. Offers low 23mΩ drain-source resistance (Rds On) and 110W maximum power dissipation. Operates from -55°C to 175°C with a 20V gate-source voltage rating. Includes 1.36nF input capacitance and fast switching times with 12ns turn-on and 70ns turn-off delay. Surface mountable and RoHS compliant.
International Rectifier IRFZ44ESTRRPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.36nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 12ns |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFZ44ESTRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
