N-Channel Power MOSFET, D2PAK package, featuring 60V drain-source breakdown voltage and 48A continuous drain current. Offers low 23mΩ drain-source resistance (Rds On) and 110W maximum power dissipation. Operates from -55°C to 175°C with a 20V gate-source voltage rating. Includes 1.36nF input capacitance and fast switching times with 12ns turn-on and 70ns turn-off delay. Surface mountable and RoHS compliant.
PackageD2PAK
MountingSurface Mount
Power110W
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Technical Specifications
International Rectifier IRFZ44ESTRRPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
48A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
60V
Element Configuration
Single
Fall Time
70ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.36nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Number of Elements
1
Package Quantity
800
Packaging
Tape and Reel
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
23mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
70ns
Turn-On Delay Time
12ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFZ44ESTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ44ESTRRPBF to view detailed technical specifications.
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