N-Channel Power MOSFET featuring 55V drain-source voltage and 49A continuous drain current. Achieves a low 17.5mΩ maximum drain-source on-resistance. Designed for high power applications with a maximum power dissipation of 110W and an operating temperature range of -55°C to 175°C. Housed in a D2PAK-2/3 (TO-263) package, this silicon metal-oxide semiconductor FET is lead-free and RoHS compliant.
PackageTO-263
Current Rating49A
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Technical Specifications
International Rectifier IRFZ44NSTRLPBF technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 49A |
| Current Rating | 49A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 17.5MR |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ44NSTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ44NSTRLPBF to view detailed technical specifications.
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