N-Channel Power MOSFET featuring 55V drain-source voltage and 51A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 13.9mΩ at a nominal Vgs of 4V. Designed for surface mounting in a D2PAK package, it boasts a maximum power dissipation of 80W and operates across a wide temperature range from -55°C to 175°C. Key electrical characteristics include 1.42nF input capacitance and fast switching times with a 14ns turn-on delay.
PackageD2PAK
Current Rating51A
MountingSurface Mount
Power80W
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Technical Specifications
International Rectifier IRFZ44ZSPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 51A |
| Current Rating | 51A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 13.9MR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.42nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| On-State Resistance | 13.9mR |
| Power Dissipation | 80W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 55V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ44ZSPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ44ZSPBF to view detailed technical specifications.
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