N-Channel Power MOSFET, 55V Drain-Source Voltage, 51A Continuous Drain Current, and 13.6mΩ On-Resistance. This silicon, metal-oxide semiconductor FET features a TO-220AB through-hole package, 82W power dissipation, and a maximum operating temperature of 175°C. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 39ns. RoHS compliant and lead-free.
PackageTO-220AB
Current Rating51A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFZ46ZPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 51A |
| Current Rating | 51A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 13.6MR |
| Dual Supply Voltage | 55V |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.46nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 82W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| On-State Resistance | 13.6R |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 82W |
| Radiation Hardening | No |
| Rds On Max | 13.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ46ZPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ46ZPBF to view detailed technical specifications.
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