International Rectifier
IRFZ48N
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220AB
MountingThrough Hole
Power130W
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Technical Specifications
International Rectifier IRFZ48N technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 64A |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 1.97nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRFZ48N Datasheet
Download the complete datasheet for International Rectifier IRFZ48N to view detailed technical specifications.
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