N-Channel Power MOSFET, 55V Drain-Source Voltage, 64A Continuous Drain Current, and 0.014 Ohm Rds On. Features include 1.97nF input capacitance, 12ns turn-on delay, and 34ns turn-off delay. This silicon, metal-oxide semiconductor FET is housed in a TO-262 package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 175°C. It offers a maximum power dissipation of 140W and is lead-free and RoHS compliant.
PackageTO-262
Current Rating64A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFZ48NLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
64A
Current Rating
64A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
1.97nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
140W
Radiation Hardening
No
Rds On Max
14mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
34ns
Turn-On Delay Time
12ns
DC Rated Voltage
55V
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFZ48NLPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ48NLPBF to view detailed technical specifications.
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