N-Channel Power MOSFET, 55V Drain-Source Voltage, 64A Continuous Drain Current, and 0.014 Ohm Rds On. Features include 1.97nF input capacitance, 12ns turn-on delay, and 34ns turn-off delay. This silicon, metal-oxide semiconductor FET is housed in a TO-262 package, suitable for through-hole mounting, and operates within a temperature range of -55°C to 175°C. It offers a maximum power dissipation of 140W and is lead-free and RoHS compliant.
PackageTO-262
Current Rating64A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFZ48NLPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 64A |
| Current Rating | 64A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 1.97nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 55V |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ48NLPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ48NLPBF to view detailed technical specifications.
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