N-Channel Power MOSFET featuring 55V drain-source voltage and 64A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.014 ohm drain-source on-resistance and 130W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it boasts fast switching characteristics with a 12ns turn-on delay and 50ns fall time. Operating across a wide temperature range from -55°C to 175°C, this lead-free component is RoHS compliant.
PackageTO-220AB
Current Rating64A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFZ48NPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
64A
Current Rating
64A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
14MR
Dual Supply Voltage
55V
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
1.97nF
Lead Free
Lead Free
Lead Pitch
2.54mm
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
130W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
34ns
Turn-On Delay Time
12ns
DC Rated Voltage
55V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFZ48NPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ48NPBF to view detailed technical specifications.
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