N-Channel Power MOSFET featuring 55V drain-source voltage and 64A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.014 ohm drain-source on-resistance and 130W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it boasts fast switching characteristics with a 12ns turn-on delay and 50ns fall time. Operating across a wide temperature range from -55°C to 175°C, this lead-free component is RoHS compliant.
PackageTO-220AB
Current Rating64A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFZ48NPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 64A |
| Current Rating | 64A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 14MR |
| Dual Supply Voltage | 55V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 1.97nF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 55V |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ48NPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ48NPBF to view detailed technical specifications.
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