International Rectifier
IRFZ48NS
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
PackageD2PAK
MountingSurface Mount
Power3.8W
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Technical Specifications
International Rectifier IRFZ48NS technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 64A |
| Drain to Source Voltage (Vdss) | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.97nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 3.8W |
| Rds On Max | 14mR |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFZ48NS Datasheet
Download the complete datasheet for International Rectifier IRFZ48NS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.